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| EIC1010A-8 UPDATED 07/20/2005 10.00-10.25 GHz 8-Watt Internally Matched Power FET FEATURES * * * * * * * * 10.00- 10.25GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 31% Power Added Efficiency -46 dBc IM3 at Po = 28 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 10.00-10.25GHz VDS = 9 V, IDSQ 2200mA Gain at 1dB Compression f = 10.00-10.25GHz VDS = 9 V, IDSQ 2200mA Gain Flatness f = 10.00-10.25GHz VDS = 9 V, IDSQ 2200mA Power Added Efficiency at 1dB Compression f = 10.00-10.25GHz VDS = 9 V, IDSQ 2200mA Drain Current at 1dB Compression f = 10.00-10.25GHz Output 3rd Order Intermodulation Distortion f = 10 MHz 2-Tone Test; Pout = 28 dBm S.C.L2 VDS = 9 V, IDSQ 65% IDSS f = 10.25 GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 38.0 6.5 TYP 39.0 7.5 MAX UNITS dBm dB 0.5 31 2300 -43 -46 4000 -2.5 3.5 5000 -4.0 4.0 o dB % 2600 mA dBc mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 mA Note: 1.) Tested with 100 Ohm gate resistor. 2.) S.C.L. = Single Carrier Level. 3.) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG 1,2 CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Total Power Dissipation Channel Temperature Storage Temperature VALUE 10 V -4.5 V IDSS 80 mA @ 3dB compression 38 W 175C -65/+175C Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the following equation PT < (TCH -TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) - (POUT - PIN). Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 4 Revised July 2005 EIC1010A-8 UPDATED 07/20/2005 10.00-10.25 GHz 8-Watt Internally Matched Power FET PERFORMANCE DATA Typical S-Parameters (T= 25C, 50 system, de-embedded to edge of package) VDS = 9 V, IDSQ 2200mA S11 and S22 6 0. Swp Max 10.5GHz 2. 0 1.0 0.8 10 5 S21 and S12 S[1,1] * EIC1010A-8 0. 4 0 4. 5.0 S21 and S12 (dB) S[2,2] * EIC1010A-8 0 3. 0 -5 -10 -15 -20 9.75 9.875 10 DB(|S[2,1]|) * EIC1010A-8 DB(|S[1,2]|) * EIC1010A-8 10.0 -10 .0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 . -0 4 -0 .6 -0. 8 .0 -2 FREQ (GHz) --- S11 --MAG ANG -1.0 9.750 9.875 10.000 10.125 10.250 10.375 10.500 0.335 0.252 0.171 0.133 0.166 0.228 0.292 -56.33 -76.92 -106.57 -155.37 156.13 124.27 103.20 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com -4 .0 -5. 0 2 -0. 5.0 0 -3 .0 0.2 10. 0 Swp Min 9.75GHz 10.125 10.25 Frequency (GHz) 10.375 10.5 --- S21 --MAG ANG --- S12 --MAG ANG --- S22 --MAG ANG 2.652 2.697 2.711 2.715 2.679 2.631 2.561 129.33 114.11 98.91 83.63 68.11 52.77 38.07 0.116 0.120 0.124 0.124 0.123 0.124 0.122 84.60 70.15 54.94 39.56 24.26 10.00 -5.08 0.465 0.450 0.411 0.379 0.339 0.301 0.268 13.82 -0.78 -15.94 -31.58 -48.49 -67.38 -86.62 page 2 of 4 Revised July 2005 EIC1010A-8 UPDATED 07/20/2005 10.00-10.25 GHz 8-Watt Internally Matched Power FET Power De-rating Curve and IM3 Definition Power Dissipation vs. Temperature 40 35 Total Power Dissipation (W 30 25 20 15 10 5 0 0 25 50 75 100 125 Case Temperature (C) 150 175 Pin [S.C.L.] (dBm) (2f2 - f1) or (2f1 - f2) THIRD-ORDER INTERCEPT POINT IP3 Pout [S.C.L.] (dBm) Potentially Unsafe Operating Region IP3 = Pout + IM3/2 f1 or f2 Pout Pin IM3 Safe Operating Region IM3 f1 f2 (2f1-f2) f1 f2 (2f2-f1) Typical Power Data (VDS = 9 V, IDSQ = 2200 mA) 40 39 P-1dB (dBm) Typical IM3 Data (VDS = 9 V, IDSQ 65% IDSS) 12 11 G-1dB (dB) P-1dB & G-1dB vs Frequency IM3 vs Output Power -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 20 21 22 23 f1 = 10.25 GHz, f2 = 10.26 GHz 38 37 36 35 9.6 9.8 P-1dB (dBm) G-1dB (dB) 10 9 8 7 10.6 IM3 (dBc) IM3 (dBc) 10.0 10.2 10.4 24 25 26 27 28 29 30 31 32 33 Frequency (GHz) Pout [S.C.L.] (dBm) Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 4 Revised July 2005 EIC1010A-8 UPDATED 07/20/2005 10.00-10.25 GHz 8-Watt Internally Matched Power FET PACKAGE OUTLINE Dimensions in inches, Tolerance + .005 unless otherwise specified Excelics EIC1010A-8 YYWW SN ORDERING INFORMATION Part Number EIC1010A-8 Notes: Grade1 Industrial fTest (GHz) 10.00-10.25 GHz P1dB (min) 38.0 IM3 (min)2 -43 1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in "Electrical Characteristics" table. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 4 of 4 Revised July 2005 |
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